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Semiconductor Materials
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Zinc Oxide (ZnO)
Material Type: Compound Semiconductor, Band Gap: 3.37 eV, Common Use: Transparent Conductors
Silicon Carbide (SiC)
Material Type: Compound Semiconductor, Band Gap: 3.26 eV, Common Use: Power Electronics
Gallium Arsenide (GaAs)
Material Type: Compound Semiconductor, Band Gap: 1.43 eV, Common Use: High-speed Electronics
Indium Phosphide (InP)
Material Type: Compound Semiconductor, Band Gap: 1.34 eV, Common Use: Fiber Optic Communications
Indium Gallium Arsenide (InGaAs)
Material Type: Compound Semiconductor, Band Gap: About 0.35 to 1.42 eV depending on composition, Common Use: Infrared Imaging
Germanium (Ge)
Material Type: Elemental Semiconductor, Band Gap: 0.66 eV, Common Use: High-efficiency Photodetectors
Silicon Germanium (SiGe)
Material Type: Alloy Semiconductor, Band Gap: Around 1.11 eV for Si to 0.66 eV for Ge, Common Use: Heterojunction Bipolar Transistors
Aluminum Gallium Arsenide (AlGaAs)
Material Type: Compound Semiconductor, Band Gap: 1.42 to 2.16 eV depending on composition, Common Use: Laser Diodes
Silicon (Si)
Material Type: Elemental Semiconductor, Band Gap: 1.12 eV, Common Use: Integrated Circuits
Cadmium Selenide (CdSe)
Material Type: Compound Semiconductor, Band Gap: 1.74 eV, Common Use: Quantum Dots
Lead Sulfide (PbS)
Material Type: Compound Semiconductor, Band Gap: 0.41 eV, Common Use: Infrared Detectors
Gallium Nitride (GaN)
Material Type: Compound Semiconductor, Band Gap: 3.4 eV, Common Use: Light-emitting Diodes
Cadmium Telluride (CdTe)
Material Type: Compound Semiconductor, Band Gap: 1.5 eV, Common Use: Thin-film Solar Cells
Indium Antimonide (InSb)
Material Type: Compound Semiconductor, Band Gap: 0.17 eV, Common Use: Infrared Detectors and Hall Effect Sensors
Aluminum Nitride (AlN)
Material Type: Compound Semiconductor, Band Gap: 6.2 eV, Common Use: Semiconductor Wafers and Optoelectronic Engineering
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