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Silicon Wafer Processing
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Wafter Slicing
Purpose: To cut the silicon ingot into thin disks. Method: Using a diamond saw or a wire saw. Equipment Used: Slicing machine, saws, coolant system.
Crystal Growth
Purpose: To produce single-crystal silicon ingots. Method: Czochralski process or Floating zone process. Equipment Used: Crystal puller, crucible, heater.
Wafer Lapping
Purpose: To smoothen the wafer surfaces after slicing. Method: Abrasive mechanical process. Equipment Used: Lapping machine, abrasive slurry, polishing pads.
Etching
Purpose: To remove surface defects or damage layers. Method: Wet chemical etching or dry plasma etching. Equipment Used: Wet bench, etching solutions, plasma etcher.
Deposition
Purpose: To deposit layers of materials on the wafer. Method: Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD). Equipment Used: CVD reactor, PVD sputtering system, vacuum chamber.
Photolithography
Purpose: To transfer circuit patterns onto the wafer. Method: UV light exposure through a photomask. Equipment Used: Photoresist coater, exposure system, developer.
Wafer Polishing
Purpose: To create a defect-free mirror finish on wafers. Method: Chemical Mechanical Planarization (CMP). Equipment Used: CMP machine, polishing slurry, pad conditioner.
Doping
Purpose: To change the electrical properties of the silicon wafer. Method: Ion implantation or diffusion. Equipment Used: Ion implanter, furnace (for diffusion), protective gases.
Metallization
Purpose: To create electrical connections on the wafer. Method: Sputtering or evaporation. Equipment Used: Metal deposition system, vacuum chamber, masks.
Inspection and Testing
Purpose: To ensure quality and performance of the wafers. Method: Visual inspection, electrical testing. Equipment Used: Microscope, electronic test equipment, defect inspection system.
Wafer Dicing
Purpose: To cut the wafer into individual dies or chips. Method: Mechanical sawing, laser cutting, or plasma dicing. Equipment Used: Dicing saw, laser cutter, plasma dicing machine.
Oxidation
Purpose: To grow a layer of silicon dioxide on the wafer surface. Method: Dry oxidation or wet oxidation. Equipment Used: Furnace, oxygen or water vapor supply, temperature control system.
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