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A semiconductor material used as the base for most integrated circuits; has moderate bandgap and good thermal properties.

The region around a p-n junction where charge carriers are absent, due to recombination; acts as a barrier to carrier flow.

The highest range of electron energies where electrons are normally present at absolute zero temperature; involved in bonding.

The energy difference between the valence band and the conduction band; responsible for electrical properties of semiconductors.

A semiconductor device that allows current to flow in one direction only; made of a p-n junction.

Semiconductor with higher electron mobility than silicon suitable for high-frequency applications but more expensive.

A pure semiconductor with no impurities; electrical properties are determined by the material itself, not by dopants.

Metal-Oxide-Semiconductor Field-Effect Transistor; a transistor that uses voltage to control the flow of current, popular in ICs.

The energy band where electrons are free to move and thus conduct electricity; higher in energy than the valence band.

A semiconductor in which extra electrons are introduced through doping, creating more negative charge carriers.

A semiconductor device used to amplify or switch electronic signals; made with p-n junctions in configurations like BJT or FET.

The speed at which an electron can move through a semiconductor when an electric field is applied.

Process of adding impurities to a semiconductor to change its electrical properties; creates n-type or p-type semiconductors.

A semiconductor material with high carrier mobility but limited by its lower bandgap and poor thermal properties compared to silicon.